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Make and break properties of electrodepositsGROSSMANN, H; HUCK, M; SCHAUDT, G et al.IEEE transactions on components, hybrids, and manufacturing technology. 1985, Vol 8, Num 1, pp 70-79, issn 0148-6411Article

Overview of stamped electronic contactsSEIDLER, J.Electri.onics. 1985, Vol 31, Num 12, pp 55-57, issn 0745-4309Article

Electric contacts, Paris, 1988, June 20-24International conference on electric contacts. 14. 1988, VI-448 pConference Proceedings

Determination of potential at the beveled interface between two materialsLE HELLEY, M; CHANTE, J. P.Solid-state electronics. 1984, Vol 27, Num 12, pp 1123-1125, issn 0038-1101Article

SCHOTTKY BARRIER HEIGHT VARIATION WITH METALLURGICAL REACTIONS IN ALUMINIUM-TITANIUM-GALLIUM ARSENIDE CONTACTSWADA Y; CHINO KI.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 559-564; BIBL. 13 REF.Article

THE CHARACTERISTICS OF AU-GE-BASED OHMIC CONTACTS TO N-GAAS INCLUDING THE EFFECTS OF AGINGMARLOW GS; DAS MB; TONGSON L et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 259-266; 7 P.; BIBL. 17 REF.Article

THE EFFECT OF BUILT-IN DRIFT FIELD AND EMITTER RECOMBINATIONS ON FCVD OF A P-N JUNCTION DIODEJAIN SC; RAY VC.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 515-523; BIBL. 18 REF.Article

EFFECT OF GETTERING ON LEAKAGE CURRENT IN SHALLOW JUNCTIONSGHEZZO M; GILDENBLAT G; COHEN SS et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 6; PP. 519-521; BIBL. 3 REF.Article

RESISTANCE INCREASE IN SMALL-AREA SI-DOPED AL-N-SI CONTACTSMORI M.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 81-86; BIBL. 13 REF.Article

SCHOTTKY BARRIER MEASUREMENTS ON P-TYPE IN⁰,53)GA⁰,47)ASVETERAN JL; MULLIN DP; ELDER DI et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 2; PP. 187-190; BIBL. 9 REF.Article

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AN ACCURATE SCALAR POTENTIAL FINITE ELEMENT METHOD FOR LINEAR, TWO-DIMENSIONAL MAGNETOSTATICS PROBLEMSMCDANIEL TW; FERNANDEZ RB; ROOT RR et al.1983; INTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN ENGINEERING; ISSN 0029-5981; GBR; DA. 1983; VOL. 19; NO 5; PP. 725-737; BIBL. 10 REF.Article

Proceedings of the thirty fourth meeting of the IEEE Holm conference on electrical contacts, San Francisco CA, September 26-29, 1988Holm conference on electrical contacts. 34. 1988, XIX-340 pConference Proceedings

Temperature dependence of specific contact resistivitySWIRHUN, S. E; SWANSON, R. M.IEEE electron device letters. 1986, Vol 7, Num 3, pp 155-157, issn 0741-3106Article

Electromigration in structures of aluminium on semi-insulating GaAsEJIMANYA, J. I.Thin solid films. 1986, Vol 144, Num 2, pp 151-158, issn 0040-6090Article

Calculations of mechanical stresses in electrical contact situationsTANGENA, A. G; HURKX, G. A. M.IEEE transactions on components, hybrids, and manufacturing technology. 1985, Vol 8, Num 1, pp 13-20, issn 0148-6411Article

Effect of space angle on constriction resistance and contact resistance for the case of line contactSANO, Y.IEEE transactions on components, hybrids, and manufacturing technology. 1985, Vol 8, Num 1, pp 228-234, issn 0148-6411Article

Evidence for resonant tunneling of electrons via sodium ions in silicon dioxideKOCH, R. H; HARTSTEIN, A.Physical review letters. 1985, Vol 54, Num 16, pp 1848-1851, issn 0031-9007Article

Diffusion d'atomes stimulée par irradiation en un contact métal-semiconducteurSINISHCHUK, I. K; CHAJKA, G. E; PISHIYANU, F. S et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 4, pp 674-677, issn 0015-3222Article

Non-alloyed ohmic contact to n-GaAs by solid phase epitaxyMARSHALL, E. D; CHEN, W. X; WU, C. S et al.Applied physics letters. 1985, Vol 47, Num 3, pp 298-300, issn 0003-6951Article

The frequency dependence of Mott-Schottky plotsBRAUN, C. M; FUJISHIMA, A; HONDA, K et al.Chemistry Letters. 1985, Num 11, pp 1763-1766, issn 0366-7022Article

Effect of measurement conditions on low-level contact resistanceMUNIESA, J; MOUSSON, J. Y.IEEE transactions on components, hybrids, and manufacturing technology. 1984, Vol 7, Num 1, pp 81-83, issn 0148-6411Article

Low resistance contacts for lead-sulfide-selenide diode lasersSWETS, D. E; HARRINGTON, C. R.Journal of the Electrochemical Society. 1984, Vol 131, Num 1, pp 172-174, issn 0013-4651Article

Contact resistance between a solid lubricant composite and metalsWATANABE, Y; TAKAGI, R.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1983, Vol 66, Num 9, pp 557-558, issn 0387-236XArticle